Darlington Complementary
Silicon Power Transistors
. . . designed for generalpurpose amplifier and low frequency
switching applications.
High DC Current Gain --
h
FE
= 3500 (Typ) @ I
C
= 5.0 Adc
CollectorEmitter Sustaining Voltage -- @ 100 mA
V
CEO(sus)
=
80 Vdc (Min) -- 2N6058
100 Vdc (Min) -- 2N6052, 2N6059
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
MAXIMUM RATINGS (1)
Rating
Symbol
2N6058
2N6052
2N6059
Unit
CollectorEmitter Voltage
V
CEO
80
100
Vdc
CollectorBase Voltage
V
CB
80
100
Vdc
EmitterBase voltage
V
EB
5.0
Vdc
Collector Current -- Continuous
Peak
I
C
12
20
Adc
Base Current
I
B
0.2
Adc
Total Device Dissipation
@T
C
= 25
_
C
Derate above 25
_
C
P
D
150
0.857
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +200
_
C
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Rating
Unit
Thermal Resistance, Junction to Case
R
JC
1.17
_
C/W
(1) Indicates JEDEC Registered Data.
160
0
0
25
50
75
100
125
150
200
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (W
A
TTS)
120
100
140
175
80
40
20
60
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 Rev. 2
1
Publication Order Number:
2N6052/D
2N6052
2N6058
2N6059
*ON Semiconductor Preferred Device
DARLINGTON
12 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80100 VOLTS
150 WATTS
*
*
CASE 107
TO204AA
(TO3)
PNP
NPN
2N6052
http://onsemi.com
2
*ELECTRICAL CHARACTERISTICS
(T
C
= 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (2)
(I
C
= 100 mAdc, I
B
= 0)
2N6058
2N6052, 2N6059
V
CEO(sus)
80
100
--
--
Vdc
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
2N6058
(V
CE
= 50 Vdc, I
B
= 0)
2N6052, 2N6059
I
CEO
--
--
1.0
1.0
mAdc
Collector Cutoff Current
(V
CE
= Rated V
CEO
, V
BE(off)
= 1.5 Vdc)
(V
CE
= Rated V
CEO
, V
BE(off)
= 1.5 Vdc, T
C
= 150
_
C)
I
CEX
--
0.5
5.0
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
--
2.0
mAdc
ON CHARACTERISTICS (2)
DC Current Gain
(I
C
= 6.0 Adc, V
CE
= 3.0 Vdc)
(I
C
= 12 Adc, V
CE
= 3.0 Vdc)
h
FE
750
100
18,000
--
--
CollectorEmitter Saturation Voltage
(I
C
= 6.0 Adc, I
B
= 24 mAdc)
(I
C
= 12 Adc, I
B
= 120 mAdc)
V
CE(sat)
--
--
2.0
3.0
Vdc
BaseEmitter Saturation Voltage
(I
C
= 12 Adc, I
B
= 120 mAdc)
V
BE(sat)
--
4.0
Vdc
BaseEmitter On Voltage
(I
C
= 6.0 Adc, V
CE
= 3.0 Vdc)
V
BE(on)
--
2.8
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter SmallSignal Short Circuit Forward
Current Transfer Ratio
(I
C
= 5.0 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
|h
fe
|
4.0
--
MHz
Output Capacitance
2N6052
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
2N6058/2N6059
C
ob
--
--
500
300
pF
SmallSignal Current Gain
(I
C
= 5.0 Adc, V
CE
= 3.0 Vdc, f = 1.0 kHz)
h
fe
300
--
--
*Indicates JEDEC Registered Data.
(2) Pulse test: Pulse Width = 300
s, Duty Cycle = 2.0%.
Figure 2. Switching Times Test Circuit
10
0.2
Figure 3. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t, TIME
(s)
5.0
0.1
0.5
1.0
3.0
20
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25
C
1.0
2.0
2N6052
2N6059
t
f
t
r
t
s
t
d
@ V
BE(off)
= 0
V
2
approx
+8.0 V
V
1
approx
-8.0 V
t
r
, t
f
10 ns
DUTY CYCLE = 1.0%
25
s
0
R
B
51
D
1
+4.0 V
V
CC
-30 V
R
C
TUT
5.0 k
50
SCOPE
for t
d
and t
r
, D
1
is disconnected
and V
2
= 0
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
100 mA
MSD6100 USED BELOW I
B
100 mA
0.5
0.2
5.0
10
For NPN test circuit reverse diode and voltage polarities.
2N6052
http://onsemi.com
3
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t)
, EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
JC
(t) = r(t) R
JC
R
JC
= 1.17
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE
PULSE
0.1
0.7
0.3
0.07
0.03
0.02
0.03
0.3
3.0
30
300
ACTIVEREGION SAFE OPERATING AREA
Figure 5. 2N6058
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. 2N6052, 2N6059
V
CE
, COLLECTOR-EMITTER VOLTAGE
(VOLTS)
50
10
20
10
5.0
2.0
0.05
50
100
70
I C
, COLLECT
OR CURRENT
(AMP)
1.0
0.5
0.1
0.2
20
30
50
10
20
10
5.0
2.0
0.05
50
100
70
I C
, COLLECT
OR CURRENT
(AMP)
1.0
0.5
0.1
0.2
20
30
T
J
= 200
C
SECOND BREAKDOWN LIM
ITED
0.1 ms
0.5 ms
1.0 ms
5.0 ms
d
c
0.1 ms
0.5 ms
T
J
= 200
C
1.0 ms
5.0 ms
d
c
BONDING WIRE LIMITED
THERMAL LIMITATION
@T
C
= 25
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION
@T
C
= 25
C (SINGLE PULSE)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5, 6, and 7 is based on T
J(pk)
= 200
_C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
v 200_C; T
J(pk)
may be calculated from the data in Figure
4. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
2N6052
http://onsemi.com
4
500
0.1
Figure 7. SmallSignal Current Gain
V
R
, REVERSE VOLTAGE (VOLTS)
50
1.0
2.0
100
5.0
0.2
0.5
C, CAP
ACIT
ANCE (pF)
300
100
70
T
J
= 25
C
C
ib
200
C
ob
3000
1.0
Figure 8. Capacitance
f, FREQUENCY (kHz)
30
2.0
5.0
20
50
1000
100
10
10
20
50
h fe
, SMALL-SIGNAL
CURRENT
GAIN
2000
1000
500
200
100
50
200
500
2N6052
2N6058/2N6059
T
C
= 25
C
V
CE
= 3.0 V
I
C
= 5.0 A
2N6052
2N6058/2N6059
2N6052
http://onsemi.com
5
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
20,000
0.2
Figure 9. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
200
0.3
0.5
1.0
2.0
20
h FE
, DC CURRENT
GAIN
10
PNP
2N6052
NPN
2N6058, 2N6059
Figure 10. Collector Saturation Region
3.0
0.5
I
B
, BASE CURRENT (mA)
1.0
1.0
2.0
10
50
1.8
I
C
= 3.0 A
T
J
= 25
C
6.0 A
2.2
2.6
5.0
3.0
0.2
I
C
, COLLECTOR CURRENT (AMP)
0.3
0.5
1.0
3.0
20
2.5
2.0
1.5
1.0
0.5
T
J
= 25
C
V
BE(sat)
@ I
C
/I
B
= 250
V
CE(sat)
@ I
C
/I
B
= 250
V
,
VOL
T
AGE (VOL
TS)
Figure 11. "On" Voltages
V
BE
@ V
CE
= 3.0 V
2.0
10,000
T
J
= 150
C
25
C
-55
C
20
I
C
, COLLECTOR CURRENT (AMP)
h FE
, DC CURRENT
GAIN
V
CE
= 3.0 V
T
J
= 150
C
25
C
-55
C
1.4
9.0 A
I
B
, BASE CURRENT (mA)
T
J
= 25
C
I
C
, COLLECTOR CURRENT (AMP)
T
J
= 25
C
V
,
VOL
T
AGE (VOL
TS)
V
BE
@ V
CE
= 3.0 V
5000
3000
2000
1000
500
300
3.0
5.0
V
CE
= 3.0 V
40,000
0.2
400
0.3
0.5
1.0
2.0
20
10
20,000
10,000
6,000
4,000
2,000
1,000
600
3.0
5.0
3.0
3.0
1.0
1.8
2.2
2.6
1.4
10
5.0
3.0
0.2 0.3
0.5
1.0
3.0
20
2.5
2.0
1.5
1.0
0.5
2.0
10
5.0
30
12 A
I
C
= 3.0 A
6.0 A
9.0 A
12 A
0.5
1.0
2.0
10
50
5.0
20
3.0
30
V
BE(sat)
@ I
C
/I
B
= 250
V
CE(sat)
@ I
C
/I
B
= 250
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